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| SPD100N03S2L-04 OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS R DS(on) ID 30 4.2 100 P-TO252-5-1 V m A * Enhancement mode * Logic Level * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated Titel: C:\ARJ\VPT0916 Erstellt von: 1) Drain pin 3,6 Type Package SPD100N03S2L-04 P-TO252-5-1 Ordering Code Q67042-S4128 Marking PN03L04 Gate pin 1 n.c.: pin 2 Source pin 4,5 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current2) TC=100C Symbol ID Value 100 100 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 325 15 6 20 150 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 3) Reverse diode dv/dt IS=100A, VDS=24V, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD100N03S2L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4) Symbol min. RthJC RthJA - Values typ. 0.7 max. 1 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID = 100 A Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25C V DS=30V, VGS=0V, Tj=125C A 0.01 10 1 5 3.4 1 100 100 6.3 4.2 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=50A Drain-source on-state resistance V GS=10V, I D=50A 1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5. 2Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry I D= 307A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 3Defined by design. Not subject to production test. 4Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD100N03S2L-04 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =24V, ID =100A, VGS =0 to 10V VDD =24V, ID =100A Symbol Conditions min. Values typ. 118 2500 980 230 12 17 45 24 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz 59 - S 3320 pF 1300 350 18 26 67 36 ns VDD =15V, VGS =10V, ID =50A, RG =2.7 - 7.9 23.3 67.5 3.6 10.5 35 89.7 - nC V(plateau) VDD =24V, ID =100A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=80A V R=15V, I F=lS, diF/dt=200A/s IS TC=25C - 0.9 46 56 100 400 1.3 58 69 A V ns nC Page 3 2003-05-09 SPD100N03S2L-04 1 Power dissipation Ptot = f (TC) parameter: VGS 4 V SPD100N03S2L-04 2 Drain current ID = f (T C) parameter: VGS 10 V SPD100N03S2L-04 160 110 W A 90 120 80 P tot ID 100 120 140 160 C 190 100 70 60 80 50 60 40 30 20 20 10 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 C 190 40 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPD100N03S2L-04 t = 8.5s p 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPD100N03S2L-04 K/W /I D A V DS 10 s 10 0 DS (on ) = ID R 10 2 Z thJC 100 s 10 -1 D = 0.50 1 ms 10 -2 0.20 0.10 0.05 10 1 10 -3 0.02 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPD100N03S2L-04 5 Typ. output characteristic ID = f (V DS); T j=25C parameter: tp = 80 s SPD100N03S2L-04 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS SPD100N03S2L-04 240 Ptot = 150W i hg f V [V] GS a b 14 A 200 180 e 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 10.0 12 11 c d e c d e R DS(on) 10 9 8 7 6 5 4 h i g f ID 160 140 120 d f g h i 100 80 60 40 20 0 a b c 3 2 VGS [V] = 1 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 10.0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 20 40 60 80 100 120 140 160 A 200 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS 2 x ID x RDS(on)max parameter: tp = 20 s 180 8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs 130 A S 110 140 120 100 80 60 40 20 100 90 gfs V 4.5 VGS ID 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0 20 40 60 80 100 120 A ID 160 Page 5 2003-05-09 SPD100N03S2L-04 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 50 A, VGS = 10 V SPD100N03S2L-04 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.35 11 9 V 1.95 R DS(on) 8 7 6 V GS(th) 1.75 1.55 1.35 ID=6.4mA 5 4 3 2 1 0 -60 -20 20 98% 1.15 typ 0.95 0.75 0.55 0.35 -60 ID =110A 60 100 140 C 200 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s 10 3 SPD100N03S2L-04 A pF Ciss 10 2 C C oss 10 3 IF 10 1 C rss T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-05-09 SPD100N03S2L-04 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A, V DD = 25 V, R GS = 25 350 14 Typ. gate charge VGS = f (QGate) parameter: ID = 100 A pulsed SPD100N03S2L-04 16 mJ V 12 E AS 250 VGS 10 200 8 150 6 100 4 50 0,2 VDS max 0,8 VDS max 2 0 25 45 65 85 105 125 145 C 185 Tj 0 0 20 40 60 80 nC 110 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD100N03S2L-04 V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-05-09 SPD100N03S2L-04 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD100N03S2L-04, for simplicity the device is referred to by the term SPD100N03S2L-04 throughout this documentation. Page 8 2003-05-09 |
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